Before starting, it should be noted that Ga4N6 is not an actual chemical compound. It seems to be a typo for GaxNy – a type of chemical compound consisting of Ga (Gallium) and N (Nitrogen). Gallium and Nitrogen can combine in various ratios to form a variety of compounds, such as GaN (Gallium Nitride), a common semiconductor. Therefore, if you want to learn about a compound of Gallium and Nitrogen, GaN could be a reasonable example.
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Definition of GaN
GaN, or Gallium Nitride, is a type of binary semiconductor.
1.1.1 Common name: Gallium Nitride.
1.1.2 English name: Gallium Nitride.
1.2. Atomic mass: Gallium has an atomic mass of 69.723 g/mol, Nitrogen has an atomic mass of 14.007 g/mol.
1.3. Molecular mass: For GaN is approximately 83.730 g/mol.
1.3.1 Molecular structure: GaN consists of one Gallium atom and one Nitrogen atom.
1.4 Ion structure: GaN is an ionic solid with Ga+ and N3- ions. -
Characteristics: GaN
2.1 Physical properties of GaN- State: Solid
- Color: Colorless
- Odor: Odorless
- pH value: Not applicable as GaN is a solid
2.2 Chemical properties of GaN
GaN is very insoluble in water and acid. It is also very stable under high temperatures and pressures.
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Common chemical equations of GaN: GaN does not participate in many chemical reactions as it is very stable.
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Synthesis of GaN
4.1 Laboratory synthesis of GaN: GaN is typically synthesized by reacting Ga and N at high temperatures.
4.2 Industrial synthesis of GaN: GaN is typically produced by the MOCVD (Metalorganic Chemical Vapor Deposition) method.
Since there is no actual Ga4N6, examples of chemical reactions and laboratory/industrial synthesis cannot be provided.